IRL2203S 查看數據表（PDF） - International Rectifier
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IRL2203S Datasheet PDF : 9 Pages
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IRL2203S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max.
30 ––– –––
––– 0.035 –––
––– ––– 0.007
––– ––– 0.01
1.0 ––– 2.5
47 ––– –––
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 110
––– ––– 31
––– ––– 57
––– 15 –––
––– 210 –––
––– 29 –––
––– 54 –––
––– 7.5 –––
––– 3500 –––
––– 1400 –––
––– 690 –––
Units
V
V/°C
V
S
µA
nA
nC
ns
nH
pF
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 60A
VGS = 4.5V, ID = 50A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 60A
VDS = 30V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = 60A
VDS = 24V
VGS = 4.5V, See Fig. 6 and 13
VDD = 15V
ID = 60A
RG = 1.8Ω, VGS = 4.5V
RD = 0.25Ω, See Fig. 10
Between lead,
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
Min. Typ. Max. Units
Conditions
––– ––– 100
MOSFET symbol
showing the
D
A
––– ––– 400
integral reverse
G
p-n junction diode.
S
––– ––– 1.3 V TJ = 25°C, IS = 60A, VGS = 0V
––– 94 140 ns TJ = 25°C, IF = 60A
––– 280 410 nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 15V, starting TJ = 25°C, L = 220µH
RG = 25Ω, IAS = 60A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4
ISD ≤ 60A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Uses IRL2203N data and test conditions.
** When mounted on FR-4 board using minimum recommended footprint.
For recommended footprint and soldering techniques refer to application note #AN-994.
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