IRH93150(2003) 查看數據表（PDF） - International Rectifier

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IRH93150
(Rev.:2003)

RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204AE)

International Rectifier 

Pre-Irradiation

IRH9150

7000

6000

5000

4000

 VGS = 0V, f = 1MHz

Ciss = Cgs + Cgd , Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

 Ciss

3000

2000

C oss

1000

0

1

C rss

10

100

-VDS , Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

20  D = -22A

16

12

 VDS =-80V

VDS = -50V

VDS = -20V

8

4

 FOR TEST CIRCUIT

SEE FIGURE 13

0

0

40

80

120

160

200

QG, Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

1000

 OPERATION IN THIS AREA LIMITED

BY RDS(on)

 TJ = 150° C

10

 TJ = 25°C

 VGS = 0 V

1

0.0

1.0

2.0

3.0

4.0

-VSD ,Source-to-Drain Voltage (V)

100

 100us

 1ms

10

 10ms

 TC = 25°C

TJ = 150°C

Single Pulse

1

1

10

100

1000

-VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

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Fig 8. Maximum Safe Operating Area

5

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