F7488 查看數據表（PDF） - International Rectifier
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F7488 Datasheet PDF : 9 Pages
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PD - 94507
IRF7488
Applications
l High frequency DC-DC converters
HEXFET® Power MOSFET
VDSS
80V
RDS(on) max
29mW@VGS=10V
Qg
38nC
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
S
1
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
S
2
App. Note AN1001)
S
3
AA
8
D
7
D
6
D
l Fully Characterized Avalanche Voltage
G
4
5
D
and Current
Top View
SO-8
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ
TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Notes through are on page 9
www.irf.com
Max.
80
± 20
6.3
5.0
50
2.5
1.6
20
-55 to + 150
300 (1.6mm from case )
Units
V
A
W
mW/°C
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
9/23/02
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