IRF7474 查看數據表（PDF） - International Rectifier
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IRF7474 Datasheet PDF : 8 Pages
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IRF7474
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
100
–––
–––
3.5
–––
–––
–––
–––
–––
0.11
50
–––
–––
–––
–––
–––
–––
–––
63
5.5
1.0
250
100
-100
V
V/°C
mΩ
V
µA
nA
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 2.7A
VDS = VGS, ID = 250µA
VDS = 95V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
6.5 ––– ––– S VDS = 50V, ID = 2.7A
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
––– 27 41
ID = 2.7A
––– 10 ––– nC VDS = 50V
Qgd
td(on)
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
––– 9.0 –––
––– 14 –––
VGS = 10V,
VDD = 50V
tr
td(off)
tf
Ciss
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
––– 7.9 ––– ns ID = 2.7A
––– 16 –––
RG = 6.0Ω
––– 5.9 –––
VGS = 10V
––– 1400 –––
VGS = 0V
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
––– 100 –––
VDS = 25V
––– 56 ––– pF ƒ = 1.0MHz
Coss
Coss
Coss eff.
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 380 –––
––– 68 –––
––– 110 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 80V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 80V
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
Typ.
–––
–––
Max.
51
2.7
Units
mJ
A
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
2
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
45
100
Max.
2.3
36
1.3
–––
–––
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 2.7A, VGS = 0V
TJ = 25°C, IF = 2.7A
di/dt = 100A/µs
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