IRF630MFP 查看數據表（PDF） - STMicroelectronics

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IRF630MFP

N-channel 200V - 0.35Ω- 9A - TO-220 /TO-220FP Mesh Overlay™ Power MOSFET

STMicroelectronics 

IRF630M - IRF630MFP

Electrical characteristics

Table 6. Sourse drain diode

Symbol

Parameter

Test conditions

ISD

ISDM (1)

Source-drain current

Source-drain current

(pulsed)

VSD (2) Forward on voltage

ISD = 9A, VGS = 0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge ISD = 9A, di/dt = 100A/µs

Reverse recovery current VDD = 50V, Tj = 150°C

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Min. Typ. Max. Unit

9

A

36

A

1.5

V

170

ns

0.95

nC

11

A

5/14

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