IRF40N03 查看數據表（PDF） - Suntac Electronic
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IRF40N03 Datasheet PDF : 4 Pages
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TYPICAL ELECTRICAL CHARACTERISTICS
IRF40N03
POWER MOSFET
40
V GS =10,9,8,7,6,5V
35
30
25
V GS =4V
20
15
10
5
0
0 0.5 1 1.5 2 2.5 3
V DS , Drain-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
3600
3000
2400
1800
C is s
1200
C oss
600
C rss
0
0 5 10 15 20 25 30
V DS , Drain-to S ource Voltage (V )
F igure 3. C apacitance
1.15
1.10
V DS =V G S
ID=250uA
1.05
1.00
0.95
0.90
0.85
0.80
-50 -25 0 25 50 75 100 125 150
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
60
V DS =10V
50
40
30
20
10
0
0
5
10
15
20
IDS , Drain-S ource C urrent (A)
F igure 7. T rans conductance V ariation
with Drain C urrent
40
25 C
30
T j=125 C
20
10
-55 C
0
0
1
2
3
4
56
V G S , G ate-to-S ource Voltage (V )
F igure 2. Trans fer C haracteris tics
1.3
V GS =10V
1.2
T j=125 C
1.1
25 C
6
1.0
0.9
-55 C
0.8
0.7
0
10
20
30
40
ID, Drain C urrent(A)
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
1.15
1.10
ID=250uA
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
T j, J unction T emperature ( C )
F igure 6. B reakdown V oltage V ariation
with T emperature
40
10
1.0
0.1
0.4 0.6 0.8 1.0 1.2 1.4
V S D, B ody Diode F orward V oltage (V )
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
Page 3
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