IR2122S 查看數據表（PDF） - International Rectifier
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IR2122S Datasheet PDF : 6 Pages
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Preliminary Data Sheet No. PD60130-J
IR2122(S)
CURRENT SENSING SINGLE CHANNEL DRIVER
Features
• Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
• Gate drive supply range from 10 to 20V
• Undervoltage lockout
• 3.3V, 5V and 15V input logic compatible
• FAULT lead indicates shutdown has occured
• Output out of phase with input
Description
The IR2122(S) is a high voltage, high speed power
MOSFET and IGBT driver. Proprietary HVIC and latch
immune CMOS technologies enable ruggedized
monolithic construction. The logic input is compatible
with standard CMOS or LSTTL outputs, down to
3.3V. The protection circuity detects over-current in
the driven power transistor and terminates the gate
drive voltage. An open drain FAULT signal is pro-
vided to indicate that an over-current shutdown has
occurred. The output driver features a high pulse
current buffer stage designed for minimum cross-con-
duction. The floating channel can be used to drive an
N-channel power MOSFET or IGBT in the high side
or low side configuration which operates up to 600
volts.
Product Summary
VOFFSET
600V max.
IO+/-
110 mA / 110 mA
VOUT
10 - 20V
VCSth
500 mV
ton/off (typ.)
250 & 200 ns
Packages
8-Lead PDIP
8-Lead SOIC
Typical Connection
V CC
IN
FAULT
www.irf.com
V CC
IN
FAULT
COM
VB
HO
CS
VS
(Refer to Lead Assignments for correct pin configuration). This/These
diagram(s) show electrical connections only. Please refer to our
Application Notes and DesignTips for proper circuit board layout.
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