IPDH4N03LA 查看數據表（PDF） - Infineon Technologies
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IPDH4N03LA Datasheet PDF : 9 Pages
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13 Avalanche characteristics
I AS=f(t AV); R GS=25 Ω
parameter: Tj(start)
100
150 °C
100 °C
25 °C
10
IPDH4N03LA G
14 Typ. gate charge
V GS=f(Q gate); I D=45 A pulsed
parameter: V DD
12
IPSH4N03LA G
15 V
10
5V
20 V
8
6
4
1
1
10
100
t AV [µs]
15 Drain-source breakdown voltage
V BR(DSS)=f(T j); I D=1 mA
2
0
1000
0
10
20
30
40
Q gate [nC]
16 Gate charge waveforms
29
V GS
28
27
26
25
24
V g s(th)
23
22
21
20
-60
-20
20
60 100 140 180
T j [°C]
Q g(th)
Q gs
Rev. 0.92 - target data sheet
page 8
Qg
Q sw
Q gd
Q gate
2004-10-27
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