IDT70125S(2006) 查看數據表（PDF） - Integrated Device Technology
零件编号
产品描述 (功能)
生产厂家
IDT70125S
(Rev.:2006)
(Rev.:2006)
Integrated Device Technology
IDT70125S Datasheet PDF : 15 Pages
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IDT70121/IDT70125
High-Speed 2K x 9 Dual-Port Static RAM with Busy & Interrupt
Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range(3)
70121X25
70125X25
Com'l Only
70121X35
70125X35
Com'l
& Ind
Symbol
Parameter
Min.
Max.
Min.
Max. Unit
READ CYCLE
tRC
Read Cycle Time
25
____
35
____
ns
tAA
Address Access Time
____
25
____
35
ns
tACE
Chip Enable Access Time
____
25
____
35
ns
tAOE
Output Enable Access Time
____
12
____
25
ns
tOH
Output Hold from Address Change
tLZ
Output Low-Z Time(1,2)
tHZ
Output High-Z Time(1,2)
tPU
Chip Enable to Power Up Time(2)
tPD
Chip Disable to Power Down Time(2)
0
____
0
____
ns
0
____
0
____
ns
____
10
____
15
ns
0
____
0
____
ns
____
50
____
50
ns
2654 tbl 09a
70121X45
70125X45
Com'l Only
70121X55
70125X55
Com'l Only
Symbol
Parameter
Min. Max. Min. Max. Unit
READ CYCLE
tRC
Read Cycle Time
45
____
55
____
ns
tAA
Address Access Time
____
45
____
55
ns
tACE
Chip Enable Access Time
____
45
____
55
ns
tAOE
Output Enable Access Time
____
30
____
35
ns
tOH
Output Hold from Address Change
tLZ
Output Low-Z Time(1,2)
tHZ
Output High-Z Time(1,2)
tPU
Chip Enable to Power Up Time(2)
tPD
Chip Disable to Power Down Time(2)
0
____
0
____
ns
0
____
0
____
ns
____
20
____
30
ns
0
____
0
____
ns
____
50
____
50
ns
NOTES:
1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2).
2. This parameter guaranteed by device characterization, but is not production tested.
3. 'X' in part numbers indicates power rating (S or L).
2654 tbl 09b
6.642
APRIL 05, 2006
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