HYB3117400BT 查看數據表（PDF） - Siemens AG

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HYB3117400BT

3.3V 4M x 4-Bit Dynamic RAM

Siemens AG 

HYB 3116(7)400BJ/BT(L) -50/-60/-70

3.3V 4Mx4-DRAM

AC Characteristics (cont’d) 5)6)

16F

TA = 0 to 70 °C,VCC = 3.3 V ± 0.3 V, tT = 5 ns

Parameter

Symbol

Limit Values

Unit Note

-50

-60

-70

min. max. min. max. min. max.

CAS precharge to RAS Delay

tRHPC 30 –

35 –

40 –

ns

Fast Page Mode Read-Modify-Write Cycle

Fast page mode read-write cycle tPRWC 71 –

80 –

95 –

ns

time

CAS precharge to WE

tCPWD 48 –

55 –

65 –

ns

CAS-before-RAS Refresh Cycle

CAS setup time

tCSR

10 –

10 –

10 –

ns

CAS hold time

tCHR

10 –

10 –

10 –

ns

RAS to CAS precharge time

tRPC

5

–

5

–

5

–

ns

Write to RAS precharge time

tWRP

10 –

10 –

10 –

ns

Write hold time referenced to RAS tWRH 10 –

10 –

10 –

ns

CAS-before-RAS Counter Test Cycle

CAS precharge time

tCPT

35 –

40 –

40 –

ns

Test Mode

CAS hold time

Write command setup time

Write command hold time

tCHRT

30

–

30 –

30 –

ns

tWTS

10 –

10 –

10 –

ns

tWTH

10 –

10 –

10 –

ns

Self Refresh Cycle

RAS pulse width

RAS precharge time

CAS hold time

tRASS

tRPS

tCHS

100k _

95 _

-50 _

100k _

110 _

-50 _

100k _

130 _

-50 _

ns 17

ns 17

ns 17

Semiconductor Group

10

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