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HY27UF081G2M-TES 查看數據表(PDF) - Hynix Semiconductor
零件编号
产品描述 (功能)
生产厂家
HY27UF081G2M-TES
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
Hynix Semiconductor
HY27UF081G2M-TES Datasheet PDF : 48 Pages
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Preliminary
HY27UF(08/16)1G2M Series
HY27SF(08/16)1G2M Series
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
CLE
ALE
CE#
WE#
RE#
WP#
MODE
H
L
L
Rising
H
X
Command Input
Read Mode
L
H
L
Rising
H
X
Address Input(4 cycles)
H
L
L
Rising
H
H
Command Input
Write Mode
L
H
L
Rising
H
H
Address Input(4 cycles)
L
L
L
Rising
H
H
Data Input
L
L
L
(1)
H
Falling
X
Sequential Read and Data Output
L
L
L
H
H
X
During Read (Busy)
X
X
X
X
X
H
During Program (Busy)
X
X
X
X
X
H
During Erase (Busy)
X
X
X
X
X
L
Write Protect
X
X
H
X
X
0V/Vcc Stand By
Table 6: Mode Selection
NOTE:
1. With the CE# don’t care option CE# high during latency time does not stop the read operation
Rev 0.7 / Apr. 2005
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