HRW0202 查看數據表（PDF） - Hitachi -> Renesas Electronics

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HRW0202

Silicon Schottky Barrier Diode for Rectifying

Hitachi -> Renesas Electronics 

HRW0202A

Main Characteristic

0.08

0.06

0A t

T

Tj =25°C

D= t \

T

0.04

0.02

D=1/6

Sin( ˘=180°)

D=1/3

D=1/2

DC

0.25

0V

0.20

0.15

t

T

Tj =125°C

D= t \

T

0.10

0.05

D=5/6

D=2/3

D=1/2

Sin( ˘=180°)

0

0 0.02 0.04 0.06 0.08 0.1

Forward current @ @IF @(A)

Fig4. Forward power dissipation Vs. Forward current

0

0 5 10 15 20 25

Reverse voltage @ @VR @(V)

Fig5. Reverse power dissipation Vs. Reverse voltage

0.12

0.25

0.10

DC

Sin( ˘=180°)

0.08

D=1/2

D=1/3

0.06

D=1/6

0.04

VR=VRRM/2

0.02 Tj =125°C

Rth(j-a)=350°C/W

0 Per one device

-25 0 25 50

75 100 125

Ambient temperature Ta ( °C)

Fig.6 Average rectified current Vs. Ambient temperature

0.20

Sin( ˘=180°)

DC

D=1/2

0.15 D=1/3

D=1/6

0.10

0.05

VR=VRRM/2

Tj =125°C

Rth(j-a)=350°C/W

0 Two device total

-25 0 25 50

75 100 125

Ambient temperature Ta ( °C)

Fig.7 Average rectified current Vs. Ambient temperature

4

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