HRC0201A 查看數據表（PDF） - Renesas Electronics

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HRC0201A

Silicon Schottky Barrier Diode for Rectifying

Renesas Electronics 

HRC0201A

0.15

0.10

0A t

T

Tj = 25°C

D = —t

T

0.05

D=1/6

D=1/3

sin(θ=180°)

D=1/2

DC

1.4

0V

1.2

t

T

D = —t

T

1.0 Tj = 125°C

0.8

0.6

0.4

D=5/6

D=2/3

D=1/2

sin(θ=180°)

0.2

0

0 0.05 0.10 0.15 0.20 0.25 0.30

Forward current IF (A)

Fig.4 Forward power dissipation vs. Forward current

0

0 5 10 15 20 25 30

Reverse voltage VR (V)

Fig.5 Reverse power dissipation vs. Reverse voltage

0.30

0.25

0.20

0.15

VR = VRRM/3

Tj = 125°C

Rth(j-a) = 600°C/W

sin(θ=180°)

DC

0.10

0.05

D=1/2

D=1/3

D=1/6

0

–25 0

25 50 75 100 125

Ambient temperature Ta (°C)

Fig.6 Average rectified current vs. Ambient temperature

Rev.1.00 May 17, 2005 page 4 of 5

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