HM5117400BTS-8 查看數據表（PDF） - Hitachi -> Renesas Electronics

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HM5117400BTS-8

4,194,304-word 4-bit Dynamic Random Access Memory

Hitachi -> Renesas Electronics 

Absolute Maximum Ratings

Parameter

Voltage on any pin relative to VSS

Supply voltage relative to VSS

Short circuit output current

Power dissipation

Operating temperature

Storage temperature

Symbol

VT

VCC

Iout

PT

Topr

Tstg

HM5117400B Series

Value

Unit

–1.0 to +7.0

V

–1.0 to +7.0

V

50

mA

1.0

W

0 to +70

C

–55 to +125

C

Recommended DC Operating Conditions (Ta = 0 to +70 C)

Parameter

Symbol Min

Typ

Max

Supply voltage

VCC

Input high voltage

VIH

Input low voltage

VIL

Note: 1. All voltage referred to VSS

4.5

5.0

5.5

2.4

—

6.5

–1.0

—

0.8

Unit Note

V

1

V

1

V

1

DC Characteristics (Ta = 0 to +70 C, VCC = 5 V 10%, VSS = 0 V)

Parameter

Operating current*1, *2

Standby current

Standby current

(L-version)

HM5117400B

-6

-7

-8

Symbol Min

I CC1

—

I CC2

—

—

Max Min

110 —

2—

1—

Max Min

100 —

2—

1—

Max Unit Test Conditions

90 mA tRC = min

2 mA TTL interface

,

= VIH

Dout = High-Z

1 mA CMOS interface

,

VCC – 0.2V

Dout = High-Z

I CC2

— 150 — 150 — 150 A CMOS interface

,

VCC – 0.2V

Dout = High-Z

5

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