MJE13007L(2005) 查看數據表（PDF） - Unisonic Technologies
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MJE13007L Datasheet PDF : 6 Pages
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MJE13007
TYPICAL CHARACTERISTICS
Figure 2. Base-Emitter Saturation Voltage
1.4
IC/IB=5
1.2
1
IC=-40℃
0.8
25℃
0.6 100℃
0.4
0.01 0.02 0.05 0.1 0.2 0.5 1 2
CollectorCurrent, IC (A)
5 10
Figure 4. Collector Saturation Region
3
TJ=25℃
2.5
2
1.5
IC=8A
1
IC=5A
IC=3A
0.5
IC=1A
0
0.01 0.02 0.05 0.1 0.2 0.5 1 2 3 5 10
Base Current, IB (A)
10000
1000
100
Figure 6. Capacitance
TJ=25℃
Cib
Cob
10
0.1
1
10
100
Reverse Voltage,VR (V)
1000
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
NPN SILICON TRANSISTOR
Figure 3. Collector-Emitter Saturation Voltage
10
5
IC/IB=5
2
1
0.5
0.2
0.1
0.05
IC=-40℃
25℃
0.02
100℃
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1 2
5 10
CollectorCurrent, IC (A)
Figure 5. DC Current Gain
100
VCE=5
TJ=100℃
25℃
10 40℃
1
0.01
0.1
1
10
CollectorCurrent, IC (A)
Figure 7. Maximum Forward Bias Safe
Operating Area
100
50
Extended
20
SOA@1μs,10μs
10
1μs
5
2
TC=25℃
1
DC
0.5
10
1μmss
5ms
0.2
0.1
0.05
0.02
0.01
10
Bonding wire limit
Thermal limit
Second breakdown limit
curves apply below
rated VCEO
20 30 5070100 200300 500 1000
Collector-Emitter Voltage, VCE (V)
5 of 6
QW-R203-019.D
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