HI1-509-2 查看數據表（PDF） - Intersil
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HI1-509-2 Datasheet PDF : 24 Pages
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HI-506, HI-507, HI-508, HI-509
Die Characteristics
METALLIZATION:
Type: CuAl
Thickness: 16kÅ ±2kÅ
SUBSTRATE POTENTIAL (NOTE):
-VSUPPLY
PASSIVATION:
Type: Nitride/Silox
Nitride Thickness: 3.5kÅ ±1kÅ
Silox Thickness: 12kÅ ±2kÅ
WORST CASE CURRENT DENSITY:
1.4 x 105 A/cm2
TRANSISTOR COUNT:
421
PROCESS:
CMOS-DI
NOTE: The substrate appears resistive to the -VSUPPLY terminal, therefore it may be left floating (Insulating Die Mount) or it may be mounted on a
conductor at -VSUPPLY potential.
Metallization Mask Layout
HI-506
HI-507
EN A0 A1 A2 A3
GND
EN A0 A1 A2 NC
GND
IN 1
IN 2
IN 3
IN 4
IN 5
IN 6
IN 7
IN 8
-V OUT
+V NC
IN 9
IN 10
IN 11
IN 12
IN 13
IN 14
IN 15
IN 16
IN 1A
IN 2A
IN 3A
IN 4A
IN 5A
IN 6A
IN 7A
IN 8A
-V OUT A
+V OUT B
IN 1B
IN 2B
IN 3B
IN 4B
IN 5B
IN 6B
IN 7B
IN 8B
15
FN3142.8
October 30, 2007
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