G7N60C 查看數據表（PDF） - Harris Semiconductor
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G7N60C Datasheet PDF : 6 Pages
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HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3
Typical Performance Curves (Continued)
200
TJ = 150oC, TC = 75oC
100
RG = 50Ω, L = 1mH
VGE = 10V
VGE = 15V
10 fMAX1 = 0.05/(tD(OFF)I + tD(ON)I)
fMAX2 = (PD - PC)/(EON + EOFF)
PD = ALLOWABLE DISSIPATION
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RθJC = 2.1oC/W
1
2
10
20
30
ICE, COLLECTOR-EMITTER CURRENT (A)
FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
50
TJ = 150oC, VGE = 15V, RG = 50Ω, L = 1mH
40
30
20
10
0
0
100
200
300
400
500 600
VCE(PK), COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 14. MINIMUM SWITCHING SAFE OPERATING AREA
1200
1000
800
CIES
FREQUENCY = 1MHz
600
400
200
0
0
CRES
COES
5
10
15
20
25
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE AS A FUNCTION OF COLLECTOR-
EMITTER VOLTAGE
IG REF = 1.044mA, RL = 50Ω, TC = 25oC
600
15
500
12.5
400
VCE = 600V
10
300
7.5
200
5
VCE = 400V
VCE = 200V
100
2.5
0
0
0
5
10
15
20
25
30
QG, GATE CHARGE (nC)
FIGURE 16. GATE CHARGE WAVEFORMS
100
0.5
0.2
0.1
10-1
0.05
0.02
0.01
t1
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
SINGLE PULSE
10-2
10-5
10-4
10-3
10-2
10-1
100
101
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
3-20
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