HEF4720BPN 查看數據表（PDF） - Philips Electronics
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HEF4720BPN Datasheet PDF : 16 Pages
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Philips Semiconductors
256-bit, 1-bit per word random access memories
Product specification
HEF4720B
HEF4720V
IDD LIMITS
See below.
FUNCTION TABLE
CS W
LH
LL
HX
O
data written
into memory
data written
into memory
Z
O
MODE
complement of data write
written into memory
complement of data read
written into memory
Z
inhibit
Notes
1. H = HIGH state (the more positive voltage)
L = LOW state (the less positive voltage)
X = state is immaterial
Z = high impedance OFF-state
PINNING
CS
W
D
A0 to A7
O
O
chip select input (active LOW)
write enable input
data input
address inputs
3-state output (active HIGH)
3-state output (active LOW)
SUPPLY VOLTAGE
HEF4720B
HEF4720V
RATING
−0,5 to 18
−0,5 to 18
RECOMMENDED OPERATING
3,0 to 15,0
4,5 to 12,5
The values given at VDD = 15 V in the following DC and
AC characteristics, are not applicable to the HEF4720V,
because of its lower supply voltage range.
STAND-BY MIN.
3
V
3
V
DC CHARACTERISTICS
VSS = 0 V
Output current
LOW
Quiescent device
current
Input leakage current
HEF4720V
HEF4720B
Tamb (°C)
VDD
V
VOL
V
SYMBOL
−40
+25
+85
MIN. MAX. MIN. MAX. MIN. MAX.
4,75 0,4
2,4
2
1,6
mA
10
0,5 IOL
15 1,5
4,8
10,0
4
3,2
mA
10
7,5
mA
5
10
IDD
15
25
25
50
50
100
100
200 µA
400 µA
800 µA
10
15
±IIN
0,3
0,3
0,3
0,3
1 µA
1 µA
January 1995
3
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