HD64F3029X25W 查看數據表（PDF） - Renesas Electronics

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HD64F3029X25W

16-Bit Single-Chip Microcomputer

Renesas Electronics 

Item

21.1.4 A/D Conversion

Characteristics

Table 21.8 A/D Conversion

Characteristics

Page

725

21.2 Electrical Characteristics 728

of HD64F3029F25W and

HD64F3029TE25W

21.2.2 DC Characteristics

730

Table 21.12 DC Characteristics

Revision (See Manual for Details)

Table amended

Item

Conver-

sion time:

134 states

Nonlinearity error

Offset error

Full-scale error

Quantization error

Absolute accuracy

Max

±3.5

±3.5

±3.5

±0.5

±4.0

Item

Conver- Nonlinearity error

sion time*: Offset error

70 states

Full-scale error

Quantization error

Absolute accuracy

Title amended

Max

±7.5

±7.5

±7.5

±0.5

±8.0

Table and note amended

Item

Current

dissipation*2

Normal

operation

Symbol Min

ICC*3

—

Sleep mode

—

Module

—

standby mode

Standby mode

—

—

Flash memory

—

programming/

erasing*4

Analog power During A/D

AICC

—

supply current conversion

During A/D

—

and D/A

conversion

Idle

—

—

Typ

Max

2.0(3.3V) 38

Test

Unit Conditions

mA f = 25 MHz

17(3.3V) 35

16(3.3V) 34

mA f = 25 MHz

mA f = 25 MHz

15(3.3V) 70

—

100

30(3.3V) 48

0.6

1.5

µA Ta ≤ 50˚C

µA

50˚C

<

T

a

mA f = 25 MHz

(reference

values)

mA

0.6

1.5

mA

0.02(3.3V) 5.0

—

15

µA Ta ≤ 50˚C

at DASTE = 0

µA 50˚C < Ta

at DASTE = 0

Rev. 2.0, 06/04, page vi of xxiv

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