GT8G136 查看數據表（PDF） - Toshiba

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GT8G136

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

Toshiba 

GT8G136

Electrical Characteristics (Ta = 25°C)

Characteristics

Gate leakage current

Collector cut-off current

Gate-emitter cut-off voltage

Collector-emitter saturation voltage

Input capacitance

Rise time

Switching time

Turn-on time

Fall time

Turn-off time

Symbol

Test Condition

IGES

ICES

VGE (OFF)

VCE (sat)

Cies

VGE = ± 6 V, VCE = 0

VCE = 400 V, VGE = 0

IC = 1 mA, VCE = 5 V

IC = 150 A, VGE = 3 V

VCE = 10 V, VGE = 0, f = 1 MHz

tr

3V

0

ton

51 Ω

tf

VIN: tr <= 100 ns

tf <= 100 ns

≒300V

toff

Duty cycle <= 1%

Min Typ. Max Unit

⎯

⎯ ± 10 μA

⎯

⎯

10

μA

0.65 1.0 1.35

V

⎯

3.5

⎯

V

⎯ 2500 ⎯

pF

⎯ 1.5 ⎯

⎯

1.7

⎯

μs

⎯

1.6

⎯

⎯

1.9

⎯

Note

Note 1: Please use devices on condition that the junction temperature is below 150°C.

Repetitive rating: pulse width limited by maximum junction temperature.

Note 2a : Device mounted on

a glass-epoxy board (a)

FR-4

25.4 × 25.4 × 0.8

(unit : mm)

Note 2b : Device mounted on

a glass-epoxy board (b)

FR-4

25.4 × 25.4 × 0.8

(unit : mm)

for COLLECTOR

for EMITTER

for GATE

for GATE

for COLLECTOR

for EMITTER

Note 3: ○ on lower right of the marking indicates Pin 1.

※ Weekly code: (Three digits)

Week of manufacture

(01 for first week of year, continues up to 52 or 53)

Year of manufacture

(One low-order digits of calendar year)

※ Pb-Free Finish (Only a coating lead terminal) :

It is marking about an underline to a week of manufacture mark.

2

2007-04-23

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