FSYC055D1 查看數據表（PDF） - Intersil
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FSYC055D1 Datasheet PDF : 8 Pages
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FSYC055D, FSYC055R
Electrical Specifications up to 100K RAD TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL TEST CONDITIONS
MIN
Drain to Source Breakdown Volts
(Note 3)
BVDSS VGS = 0, ID = 1mA
60
Gate to Source Threshold Volts
(Note 3)
VGS(TH) VGS = VDS, ID = 1mA
1.5
Gate-Body Leakage
(Notes 2, 3)
IGSS
VGS = ±20V, VDS = 0V
-
Zero-Gate Leakage
(Note 3)
IDSS
VGS = 0, VDS = 48V
-
Drain to Source On-State Volts
(Notes 1, 3)
VDS(ON) VGS = 12V, ID = 70A
-
Drain to Source On Resistance
(Notes 1, 3)
rDS(ON)12 VGS = 12V, ID = 56A
-
NOTES:
1. Pulse test, 300µs max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS.
MAX
-
4.0
100
25
0.882
0.012
Single Event Effects (SEB, SEGR) Note 4
TEST
SYMBOL
ENVIRONMENT (NOTE 5)
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (µ)
APPLIED
VGS BIAS
(V)
Single Event Effects Safe Operating
SEESOA
Ni
26
43
-20
Area
Br
37
36
-10
Br
37
36
-15
Br
37
36
-20
|
60
31
0
|
60
31
-5
|
60
31
-10
|
60
31
-15
|
60
31
-20
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
UNITS
V
V
nA
µA
V
Ω
(NOTE 6)
MAXIMUM
VDS BIAS
(V)
60
60
48
36
60
48
36
24
12
Typical Performance Curves
1-
LET = 26MeV/mg/cm2, RANGE = 43µ
2-
LET = 37MeV/mg/cm2, RANGE = 36µ
3-
LET = 60MeV/mg/cm2, RANGE = 31µ
70
FLUENCE = 1E5 IONS/cm2 (TYPICAL)
60
50
1
40
30
2
20
3
10
TEMP = 25oC
0
0
-5
-10
-15
-20
-25
VGS (V)
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
1E-3
1E-4
1E-5
1E-6
ILM = 10A
30A
100A
300A
1E-7
10
30
100
300
DRAIN SUPPLY (V)
1000
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO IAS
3
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