FQT5P10TF 查看數據表（PDF） - Fairchild Semiconductor
零件编号
产品描述 (功能)
生产厂家
FQT5P10TF Datasheet PDF : 8 Pages
| |||
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
※ Notes :
1. V =0V
2.
I
GS
=
-250 μ
A
D
0.8
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
101
100
10-1
10-2
10-1
Operation in This Area
is Limited by R DS(on)
100 µs
1 ms
10 ms
100 ms
DC
※ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
100
101
102
-VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. VGS = -10 V
2. ID = -0.5 A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs. Temperature
1.0
0.8
0.6
0.4
0.2
0.0
25
50
75
100
125
150
T , Case Temperature [℃]
C
Figure 10. Maximum Drain Current
vs. Case Temperature
102
D =0 .5
0 .2
101
0 .1
0 .0 5
0 .0 2
100 0.01
s in gle pu ls e
※ N otes :
1 . Z θ J C(t) = 6 2 .5 ℃ /W M a x .
2. D u ty F ac to r, D = t1/t2
3 . T J M - T C = P D M * Z θ J C( t )
PDM
t1
t2
1 0 -1
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
102
103
t1, S quare W ave P ulse D uration [sec]
Figure 11. Transient Thermal Response Curve
©2002 Fairchild Semiconductor Corporation
FQT5P10 Rev. C0
www.fairchildsemi.com
Share Link: 