FQD2N50B 查看數據表（PDF） - Fairchild Semiconductor
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FQD2N50B Datasheet PDF : 9 Pages
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Typical Characteristics
Top :
VGS
15 V
10 V
8.0 V
7.0 V
100
6.5 V
6.0 V
Bottom : 5.5 V
10-1
10-2
10-1
※ Notes :
1. 250μs Pulse Test
2. TC = 25℃
100
101
VDS , Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
18
15
VGS = 10V
12
VGS = 20V
9
6
3
※ Note : TJ = 25℃
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
ID , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
350
300
250
200
150
100
50
0
10-1
C
iss
Coss
C
rss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
100
10-1
2
150℃
25℃
-55℃
※ Notes :
1. VDS = 50V
2. 250μs Pulse Test
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
100
10-1
0.2
150℃ 25℃
※ Notes :
1. VGS = 0V
2. 250μs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
V , Source-Drain Voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V = 100V
DS
10
VDS = 250V
8
V = 400V
DS
6
4
2
※ Note : ID = 2.1 A
0
0
1
2
3
4
5
6
7
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, May 2000
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