FQB11N40C 查看數據表（PDF） - Fairchild Semiconductor
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FQB11N40C Datasheet PDF : 8 Pages
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Package Marking and Ordering Information
Part Number
FQB11N40CTM
Top Mark
FQB11N40C
Package
D2-PAK
Packing Method Reel Size
Tape and Reel 330 mm
Tape Width
24 mm
Quantity
800 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min Typ Max Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
400 --
∆BVDSS Breakdown Voltage Temperature
/ ∆TJ Coefficient
ID = 250 µA, Referenced to 25°C -- 0.54
IDSS
Zero Gate Voltage Drain Current
VDS = 400 V, VGS = 0 V
VDS = 320 V, TC = 125°C
--
--
--
--
IGSSF
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
--
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
--
--
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 5.25 A
VDS = 40 V, ID = 5.25 A
2.0 --
4.0
V
-- 0.5 0.53
Ω
-- 7.1
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 840 1090 pF
-- 250 325
pF
--
85
110
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 200 V, ID = 10.5 A,
RG = 25 Ω
--
14
40
ns
--
89 190
ns
--
81 170
ns
(Note 4)
--
81 170
ns
VDS = 320 V, ID = 10.5 A,
--
28
35
nC
VGS = 10 V
--
4
--
nC
(Note 4) --
15
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 10.5 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 10.5 A,
dIF / dt = 100 A/µs
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 5.7 mH, IAS = 10.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25oC.
3. ISD ≤ 10.5 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25oC.
4. Essentially independent of operating temperature.
--
--
10.5
A
--
--
42
A
--
--
1.4
V
-- 290
--
ns
-- 2.4
--
µC
©2004 Fairchild Semiconductor Corporation
2
FQB11N40C Rev. C0
www.fairchildsemi.com
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