FQA13N50C 查看數據表（PDF） - Fairchild Semiconductor

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FQA13N50C

500V N-Channel MOSFET

Fairchild Semiconductor 

FQA13N50C

500V N-Channel MOSFET

QFET®

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies,

active power factor correction, electronic lamp ballasts

based on half bridge topology.

Features

• 13.5A, 500V, RDS(on) = 0.48Ω @VGS = 10 V

• Low gate charge ( typical 43 nC)

• Low Crss ( typical 20pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

G DS

TO-3PN

FQA Series

D

!

G!

●

◀▲

●

●

!

S

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol

VDSS

ID

IDM

VGSS

EAS

IAR

EAR

dv/dt

PD

TJ, TSTG

TL

Parameter

Drain-Source Voltage

Drain Current

- Continuous (TC = 25°C)

- Continuous (TC = 100°C)

Drain Current - Pulsed

(Note 1)

Gate-Source Voltage

Single Pulsed Avalanche Energy

(Note 2)

Avalanche Current

(Note 1)

Repetitive Avalanche Energy

(Note 1)

Peak Diode Recovery dv/dt

(Note 3)

Power Dissipation (TC = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

FQA13N50C

500

13.5

8.5

54

± 30

860

13.5

21.8

4.5

218

1.56

-55 to +150

300

Thermal Characteristics

Symbol

RθJC

RθJS

RθJA

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

Typ

Max

--

0.58

0.24

--

--

40

Units

V

A

A

A

V

mJ

A

mJ

V/ns

W

W/°C

°C

°C

Units

°C/W

°C/W

°C/W

©2004 Fairchild Semiconductor Corporation

Rev. A, October 2004

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