FDS6984AS(2005) 查看數據表（PDF） - Fairchild Semiconductor

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FDS6984AS
(Rev.:2005)

Dual Notebook Power Supply N-Channel PowerTrench® SyncFET™

Fairchild Semiconductor 

Electrical Characteristics

Symbol

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Type Min Typ Max Units

Off Characteristics

BVDSS

Drain-Source Breakdown

Voltage

IDSS

Zero Gate Voltage Drain

Current

IGSS

Gate-Body Leakage

VGS = 0 V, ID = 1 mA

Q2

VGS = 0 V, ID = 250 µA

Q1

VDS = 24 V, VGS = 0 V

Q2

Q1

VDS = 24 V, VGS = 0 V, TJ = 125°C Q2

Q1

VGS = ±20 V, VDS = 0 V

All

On Characteristics (Note 2)

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 1 mA

Q2

VDS = VGS, ID = 250 µA

Q1

∆VGS(th)

∆TJ

Gate Threshold Voltage

Temperature Coefficient

ID = 1 mA, Referenced to 25°C

Q2

ID = 250 uA, Referenced to 25°C

Q1

RDS(on)

Static Drain-Source

On-Resistance

VGS = 10 V, ID = 8.5 A

Q2

VGS = 10 V, ID = 8.5 A, TJ = 125°C

VGS = 4.5 V, ID = 7 A

VGS = 10 V, ID = 5.5 A

Q1

VGS = 10 V, ID = 5.5 A, TJ = 125°C

VGS = 4.5 V, ID = 4.6 A

ID(on)

On-State Drain Current

VGS = 10 V, VDS = 5 V

Q2

Q1

gFS

Forward Transconductance VDS = 5 V, ID = 8.5 A

Q2

VDS = 5 V, ID = 5.5 A

Q1

Dynamic Characteristics

Ciss

Input Capacitance

VDS = 15 V, VGS = 0 V,

Q2

f = 1.0 MHz

Q1

Coss

Output Capacitance

Q2

Q1

Crss

Reverse Transfer Capacitance

Q2

Q1

RG

Gate Resistance

VGS = 15mV, f = 1.0 MHz

Q2

Q1

30

V

30

500 µA

1

2.3

mA

79

nA

±100 nA

1 1.7 3

V

1 1.8 3

–3

mV/°C

–4

17 20

mΩ

24 32

21 28

26 31

34 43

32 40

30

A

20

25

S

18

530

pF

420

170

pF

120

60

pF

50

3.1

Ω

2.2

FDS6984AS Rev A (X)

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