FDR840 查看數據表（PDF） - Fairchild Semiconductor
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FDR840 Datasheet PDF : 5 Pages
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Typical Characteristics
50
VGS = -4.5V
-3.5V
40
30
-3.0V
-2.5V
-2.0V
20
10
-1.5V
0
0
0.5
1
1.5
2
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.4
1.3
ID = -10A
VGS = -4.5V
1.2
1.1
1
0.9
0.8
0.7
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
60
VDS = -5V
50
40
TA = -55oC
25oC
125oC
30
20
10
0
0.5
1
1.5
2
2.5
3
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2
1.8 VGS = -2.0V
1.6
1.4
-2.5V
1.2
-3.0V
-3.5V
-4.0V
1
-4.5V
0.8
0
10
20
30
40
50
- ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.04
0.03
ID = -5A
A
0.02
0.01
TA = 125oC
TA = 25oC
0
1
2
3
4
5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
0.01
TA = 125oC
25oC
-55oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FD840P Rev C1(W)
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