FDP047N08 查看數據表（PDF） - Fairchild Semiconductor
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FDP047N08 Datasheet PDF : 8 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
500
VGS = 15.0V
10.0V
8.0 V
100
7.0 V
6.5 V
6.0 V
5.5 V
10
1
0.002
*Notes:
1. 250µs Pulse Test
2. TC = 25oC
0.01
0.1
1
VDS,Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.006
0.005
0.004
0.003
VGS = 10V
VGS = 20V
0.002
0
*Note: TC = 25oC
100
200
300
400
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
12000
Ciss
8000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
4000
Coss
Crss
*Note:
1. VGS = 0V
2. f = 1MHz
0
0.1
1
10
30
VDS, Drain-Source Voltage [V]
FDP047N08 Rev. A
Figure 2. Transfer Characteristics
500
*Notes:
1. VDS = 20V
2. 250µs Pulse Test
100
175oC
25oC
10
-55oC
1
3
4
5
6
7
VGS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
500
100
175oC
25oC
10
*Notes:
1. VGS = 0V
2. 250µs Pulse Test
1
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 15V
VDS = 37.5V
8
VDS = 60V
6
4
2
*Note: ID = 80A
0
0
20 40 60 80 100 120
Qg, Total Gate Charge [nC]
3
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