FDP7030BLS 查看數據表（PDF） - Fairchild Semiconductor
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FDP7030BLS Datasheet PDF : 6 Pages
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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate–Body Leakage, Forward
IGSSR
Gate–Body Leakage, Reverse
VGS = 0 V,
ID = 1 mA
ID = 10 mA, Referenced to 25°C
VDS = 24 V,
VGS = 20 V,
VGS = –20 V
VGS = 0 V
VDS = 0 V
VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS
Forward Transconductance
VDS = VGS,
ID = 1 mA
ID = 1 mA, Referenced to 25°C
VGS = 10 V,
ID = 28 A
VGS = 4.5 V, ID = 23 A
VGS=10 V, ID = 28A, TJ = 100°C
VGS = 10 V,
VDS = 5 V
VDS = 5 V,
ID = 28 A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 15 V,
f = 1.0 MHz
VGS = 0 V,
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qg s
Gate–Source Charge
Qgd
Gate–Drain Charge
(Note 2)
VDS = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
VDS = 15 V,
VGS = 5 V
ID = 28 A
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
VGS = 0 V, IS = 3.5 A (Note 1)
Voltage
VGS = 0 V, IS = 7 A
(Note 1)
trr
Diode Reverse Recovery Time
IF = 11.5A,
Qrr
Diode Reverse Recovery Charge
diF/dt = 300 A/µs
(Note 2)
30
V
22
mV/°C
500
µA
100
nA
–100 nA
1
2.3
3
V
–4.4
mV/°C
8.6 10.5 mΩ
13.2 16.5
12.4 16.5
50
A
47
S
1708
pF
474
pF
134
pF
11
21
ns
8
16
ns
30
48
ns
16
29
ns
15
21
nC
7
nC
5
nC
3.5
A
0.44 0.7
V
0.60
20
ns
20
nC
Notes:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
2. See “SyncFET Schottky body diode characteristics” below.
FDP7030BLS Rev B(W)
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