EMP25Q12B 查看數據表（PDF） - International Rectifier

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EMP25Q12B

NPT IGBTs 25A, 1200V

International Rectifier 

EMP25P12B I27149 08/07

Fig. 21 – Typical Diode EREC vs. IF

Tj = 125ºC

Fig. 22 – Typical Capacitance vs. VCE

VGE = 0V; f = 1MHz

IF = (A)

Fig. 23 – Typical Gate Charge vs. VGE

IC = 25A; L = 600µH; VCC = 600V

VCE = (V)

Fig. TF1 – Thermal Sensor Resistance

vs. Base-Plate Temperature

www.irf.com

QG = (nC)

TC (ºC)

10

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