DTA114YET1G(2011) 查看數據表（PDF） - ON Semiconductor
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DTA114YET1G Datasheet PDF : 14 Pages
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DTA114EET1 Series, SDTA114EET1 Series
THERMAL CHARACTERISTICS
Rating
Total Device Dissipation, FR−4 Board (Note 1)
@ TA = 25C
Derate above 25C
Thermal Resistance,
Junction−to−Ambient (Note 1)
Total Device Dissipation,
FR−4 Board (Note 2) @ TA = 25C
Derate above 25C
Thermal Resistance, Junction−to−Ambient (Note 2)
Junction and Storage Temperature Range
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 1.0 Inch Pad.
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector−Base Cutoff Current (VCB = 50 V, IE = 0)
Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0)
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0)
DTA114EET1
DTA124EET1
DTA144EET1
DTA114YET1, SDTA114YET1
DTA114TET1
DTA143TET1
DTA123EET1
DTA143EET1
DTA143ZET1
DTA124XET1
DTA123JET1
DTA115EET1
DTA144WET1
ICBO
ICEO
IEBO
Collector−Base Breakdown Voltage
(IC = 10 mA, IE = 0)
Collector−Emitter Breakdown Voltage (Note 3)
(IC = 2.0 mA, IB = 0)
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
V(BR)CBO
V(BR)CEO
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic
Symbol
ON CHARACTERISTICS (Note 4)
DC Current Gain
hFE
(VCE = 10 V, IC = 5.0 mA)
DTA114EET1
DTA124EET1
DTA144EET1
DTA114YET1, SDTA114YET1
DTA114TET1
DTA143TET1
DTA123EET1
DTA143EET1
DTA143ZET1
DTA124XET1
DTA123JET1
DTA115EET1
DTA144WET1
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
Value
200
1.6
600
300
2.4
400
−55 to +150
Unit
mW
mW/C
C/W
mW
mW/C
C/W
C
Min
Typ
Max
Unit
−
−
100
nAdc
−
−
500
nAdc
mAdc
−
−
0.5
−
−
0.2
−
−
0.1
−
−
0.2
−
−
0.9
−
−
1.9
−
−
2.3
−
−
1.5
−
−
0.18
−
−
0.13
−
−
0.2
−
−
0.05
−
−
0.13
50
−
Vdc
−
50
−
Vdc
−
Min
Typ
Max
Unit
−
35
60
−
60
100
−
80
140
−
80
140
−
160
250
−
160
250
−
8.0
15
−
15
27
−
80
140
−
80
130
−
80
140
−
80
150
−
80
140
−
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