DS1258W-150-IND(2002) 查看數據表（PDF） - Dallas Semiconductor -> Maxim Integrated
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DS1258W-150-IND Datasheet PDF : 9 Pages
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www.maxim-ic.com
FEATURES
§ 10-Year Minimum Data Retention in the
Absence of External Power
§ Data is Automatically Protected During a
Power Loss
§ Separate Upper Byte and Lower Byte Chip
Select Inputs
§ Unlimited Write Cycles
§ Low-Power CMOS
§ Read and Write Access Times as Fast as
100ns
§ Lithium Energy Source is Electrically
Disconnected to Retain Freshness Until
Power is Applied for the First Time
§ Optional Industrial Temperature Range of
-40°C to +85°C, Designated IND
DS1258W
3.3V 128k x 16 Nonvolatile
SRAM
PIN ASSIGNMENT
CEU 1
CEL 2
DQ15 3
DQ14 4
DQ13 5
DQ12 6
DQ11 7
DQ10 8
DQ9 9
DQ8 10
GND 11
DQ7 12
DQ6 13
DQ5 14
DQ4 15
DQ3 16
DQ2 17
DQ1 18
DQ0 19
OE 20
40
VCC
39 WE
38 A16
37 A15
36 A14
35 A13
34 A12
33 A11
32 A10
31 A9
30 GND
29 A8
28 A7
27 A6
26 A5
25 A4
24 A3
23 A2
22 A1
21 A0
40-Pin Encapsulated Package
740mil Extended
PIN DESCRIPTION
A0 - A16
- Address Inputs
DQ0 - DQ15
- Data In/Data Out
CEU
- Chip Enable Upper Byte
CEL
- Chip Enable Lower Byte
WE
- Write Enable
OE
- Output Enable
VCC
GND
- Power (+3.3V)
- Ground
DESCRIPTION
The DS1258W 3.3V 128k x 16 Nonvolatile SRAM is a 2,097,152-bit, fully static, nonvolatile (NV)
SRAM, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy
source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. When such
a condition occurs, the lithium energy source is automatically switched on and write protection is
unconditionally enabled to prevent data corruption. DIP-package DS1258W devices can be used in place
of solutions which build nonvolatile 128k x 16 memory by utilizing a variety of discrete components.
There is no limit on the number of write cycles that can be executed and no additional support circuitry is
required for microprocessor interfacing.
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