DG200AK 查看數據表（PDF） - Harris Semiconductor

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DG200AK

CMOS Dual/Quad SPST Analog Switches

Harris Semiconductor 

Metallization Topology

DIE DIMENSIONS:

74 x 77 x 14 ± 1mils

METALLIZATION:

Type: Al

Thickness: 10kÅ ± 1kÅ

GLASSIVATION:

Type: SiO2/Si3N4

SiO2 Thickness: 7kÅ ± 1.4kÅ

Si3N4 Thickness: 8kÅ ± 1.2kÅ

WORST CASE CURRENT DENSITY:

1 x 105 A/cm2

Metallization Mask Layout

D1

(9)

DG200

DG200

V-

D2

(7)

(6)

S1 (10)

V- (SUBSTRATE)* (12)

(5) S2

(14)

(1)

IN1

IN2

* Backside of Chip is V+

(3)

GND

9-19

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