GLT4160L16-60TC 查看數據表（PDF） - G-Link Technology
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GLT4160L16-60TC Datasheet PDF : 16 Pages
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G-LINK
AC Characteristics
GLT4160L16
1M X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
Mar 2000 (Rev.2.0)
35
40
50
60
Parameter
Symbol Min. Max. Min. Max. Min. Max. Min. Max. Unit Notes
Data Set-Up Time
Data Hold Time
Data Hold Time Referenced to RAS
RAS to WE E Delay Time
CAS to WE Delay Time
Column Address to WE Delay Time
RAS to CAS Precharge Time
Access Time from CAS Precharge
EDO Page Mode Cycle Time
EDO Page Mode Read-Modify-Write Cycle Time
CAS Precharge Time (EDO Page Mode)
RAS Pulse Width (EDO Page Mode Only)
Access Time from OE
OE to Data Delay Time
OE to Output High-Z
OE Command Hold Time
Data Output Hold after CAS low
RAS to Output High-Z
WE to Output High-Z
OE to CAS Hold Time
CAS Hold Time to OE
OE Precharge Time
CAS Set-Up Time for CAS -before- RAS Cycle
CAS Hold Time for CAS -before- RAS Cycle
Transition Time
Refresh Period
RAS pulse width ( CAS -before- RAS Self
refresh)
RAS precharge time ( CAS -before-RAS Self refresh)
tDS
tDH
tDHR
tRWD
tCWD
tAWD
tRPC
tCPA
tPC
tPRWC
tCP
tRASP
tOEA
tOED
tOEZ
tOEH
tDOH
tREZ
tWEZ
tOCH
tCHO
tOEP
tCSR
tCHR
tT
tREF
tRASS
tRPS
0
0
0
0
ns
7
7
8
10
ns
31
36
46
55
ns
49
54
64
79
ns
23
24
25
32
ns
30
32
37
47
ns
0
0
0
0
ns
20
22
30
32 ns
13
15
20
25
ns
47
50
59
63
ns
5
5
8
15
ns
35 100K 40 100K 50 100K 60 100k ns
11
12
14
15 ns
8
8
8
13
ns
3 8 3 8 3 8 3 8 ns
6
7
7
0
ns
3
3
5
5
ns
3 8 3 8 3 8 3 8 ns
3 10 3 10 3 12 3 12 ns
8
8
8
5
ns
8
8
8
5
ns
8
8
8
5
ns
10
10
10
10
ns
8
8
10
10
ns
1.5 50 1.5 50 2 50 2 50 ns
16
16
16
16 ms
100
100
100
100
µs
60
70
90
110
ns
CAS precharge time ( CAS -before-RAS Self refresh) tCHS
-50
-50
-50
-50
ns
G-Link Technology Corporation
2701Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
-6-
G-Link Technology Corporation,Taiwan
6F, No. 24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
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