WRITE CYCLE 1 (W Controlled, See Notes 1, 2, and 3)
MCM6205D–15 MCM6205D–20 MCM6205D–25
Parameter
Symbol Min
Max
Min
Max
Min
Max Units Notes
Write Cycle Time
tAVAV
15
—
20
—
25
—
ns
4
Address Setup Time
Address Valid to End of Write
tAVWL
0
—
0
—
0
—
ns
tAVWH
12
—
15
—
20
—
ns
Write Pulse Width
tWLWH,
12
—
15
—
20
—
ns
tWLEH
Write Pulse Width, G High
tWLWH,
10
—
12
—
15
—
ns
5
tWLEH
Data Valid to End of Write
tDVWH
7
—
8
—
10
—
ns
Data Hold Time
Write Low to Output High–Z
Write High to Output Active
tWHDX
0
—
0
—
0
—
ns
tWLQZ
0
7
0
8
0
10
ns 6, 7, 8
tWHQX
4
—
4
—
4
—
ns 6, 7, 8
Write Recovery Time
tWHAX
0
—
0
—
0
—
ns
NOTES:
1. A write occurs during the overlap of E low and W low.
2. E1 and E2 are represented by E in this data sheet. E2 is of opposite polarity to E.
3. If G goes low coincident with or after W goes low, the output will remain in a high impedance state.
4. All timings are referenced from the last valid address to the first transitioning address.
5. If G ≥ VIH, the output will remain in a high impedance state.
6. At any given voltage and temperature, tWLQZ (max) is less than tWHQX (min), both for a given device and from device to device.
7. Transition is measured ± 500 mV from steady–state voltage with load of Figure 1B.
8. This parameter is sampled and not 100% tested.
A (ADDRESS)
E (CHIP ENABLE)
W (WRITE ENABLE)
D (DATA IN)
Q (DATA OUT)
WRITE CYCLE 1 (W Controlled, See Notes 1, 2, and 3)
tAVAV
tAVWH
tAVWL
HIGH–Z
tWLQZ
tWLWH
tWLEH
tDVWH
DATA VALID
HIGH–Z
tWHAX
tWHDX
tWHQX
MOTOROLA FAST SRAM
MCM6205D
5