CY7C199N 查看數據表（PDF） - Cypress Semiconductor

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CY7C199N

32K x 8 Static RAM

Cypress Semiconductor 

CY7C199N

Electrical Characteristics Over the Operating Range[3]

Parameter

Description

ISB1

Automatic CE

Power-down Current—

TTL Inputs

ISB2

Automatic CE

Power-down Current—

CMOS Inputs

-20

-25

-35

Test Conditions

Min. Max. Min. Max. Min. Max.

Max. VCC, CE > VIH, Com’l

VIN > VIH or VIN <

VIL, f = fMAX

L

Max. VCC,

Com’l

CE > VCC – 0.3V

VIN > VCC – 0.3V or

L

VIN < 0.3V, f = 0 Mil

30

5

10

0.05

15

30

5

10

0.05

15

25

5

10

0.05

15

-55

Min. Max. Unit

25 mA

5 mA

10 mA

0.05 mA

15 mA

Capacitance[4]

Parameter

CIN

COUT

Description

Input Capacitance

Output Capacitance

Test Conditions

TA = 25°C, f = 1 MHz,

VCC = 5.0V

Max.

Unit

8

pF

8

pF

AC Test Loads and Waveforms[5]

5V

OUTPUT

R1 481Ω

5V

OUTPUT

R1 481Ω

30 pF

INCLUDING

JIG AND

SCOPE

R2

255 Ω

(a)

5 pF

R2

255Ω

INCLUDING

JIG AND

SCOPE (b)

Equivalent to:

THÉVENIN EQUIVALENT

OUTPUT

167 Ω

1.73V

3.0V

GND

10%

≤tr

ALL INPUT PULSES

90%

90%

10%

≤tr

Data Retention Characteristics Over the Operating Range (L-version only)

Parameter

Description

Conditions[6]

VDR

ICCDR

tCDR[4]

tR [5]

VCC for Data Retention

Data Retention Current

Com’l

Com’l L

Chip Deselect to Data Retention Time

Operation Recovery Time

VCC = VDR = 2.0V,

CE > VCC – 0.3V,

VIN > VCC – 0.3V or

VIN < 0.3V

Data Retention Waveform

Min.

Max.

Unit

2.0

V

µA

10

µA

0

ns

200

µs

DATA RETENTION MODE

VCC

3.0V

VDR > 2V

tCDR

CE

Note:

4. Tested initially and after any design or process changes that may affect these parameters.

5. tR< 3 ns for the -12 and the -15 speeds. tR< 5 ns for the -20 and slower speeds

6. No input may exceed VCC + 0.5V.

3.0V

tR

Document #: 001-06493 Rev. **

Page 3 of 10

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