MMST6427(Rev10-2) 查看數據表（PDF） - Diodes Incorporated.
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| MMST6427 Datasheet PDF : 0 Pages | |||
MMST6427
NPN SURFACE MOUNT DARLINGTON TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Ideal for Low Power Amplification and Switching
• High Current Gain
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 2)
• "Green" Device (Note 3 and 4)
Mechanical Data
• Case: SOT-323
• Case Material: Molded Plastic, "Green" Molding
Compound, Note 4. UL Flammability Classification Rating
94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
• Marking Information: K1D - See Page 3
• Ordering & Date Code Information: See Page 3
• Weight: 0.006 grams (approximate)
A
C
BC
B
E
G
H
K
J
DE
L
C
B
E
SOT-323
Dim Min Max
A
0.25 0.40
B
1.15 1.35
C
2.00 2.20
D
0.65 Nominal
E
0.30 0.40
G 1.20 1.40
H
1.80 2.20
M
J
0.0 0.10
K
0.90 1.00
L
0.25 0.40
M 0.10 0.18
α
0°
8°
All Dimensions in mm
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
Pd
RθJA
Tj, TSTG
Value
40
40
12
500
200
625
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Symbol Min
Max Unit
Test Condition
V(BR)CBO
40
V(BR)CEO
40
V(BR)EBO
12
ICBO
⎯
ICEO
⎯
IEBO
⎯
⎯
V IC = 100μA, IE = 0
⎯
V IC = 100mA, IB = 0
⎯
V IE = 10μA, IC = 0
50
nA VCB = 30V, IE = 0
1.0
μA VCE = 25V, IB = 0
50
nA VEB = 10V, IC = 0
hFE
VCE(SAT)
VBE(SAT)
VBE(ON)
10,000
20,000
14,000
⎯
⎯
⎯
100,000
200,000
140,000
1.2
1.5
2.0
1.75
IC = 10mA, VCE = 5.0V
⎯ IC = 100mA, VCE = 5.0V
IC = 500mA, VCE = 5.0V
V IC = 50mA, IB = 0.5mA
IC = 500mA, IB = 0.5mA
V IC = 500mA, IB = 0.5mA
V IC = 50mA, VCE =5.0V
Cobo
Cibo
8.0 Typical
15 Typical
pF VCB = 10V, f = 1.0MHz, IE = 0
pF VEB = 0.5V, f = 1.0MHz, IC = 0
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Code
0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
5. Short duration pulse test used to minimize self-heating effect.
DS30166 Rev. 10 - 2
1 of 3
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MMST6427
© Diodes Incorporated
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