CXG1097EN 查看數據表（PDF） - Sony Semiconductor

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CXG1097EN

Low Noise Amplifier with Bypass Switch/Mixer

Sony Semiconductor 

CXG1097EN

Electrical Characteristics

Conditions: VDD = 2.7V, VCTL (H) = 2.7V, VCTL (L) = 0V, fRF = 850MHz, fLO = 740MHz, PLO = –10dBm,

unless otherwise specified

(Ta = 25°C)

Block

Item

VCTL1 VCTL2 Symbol Min. Typ. Max. Unit Measurement condition

Control current H

for High state

L

L

ICTLH — 50 70 µA

H

Current

consumption

L L or H IDDSW

H

L

IDDL

H

H

IDDH

— 0.3 0.6

When no signal

— 3.8 5 mA

— 10.5 17

L L or H GPSW –3.7 –3.2 –2.7

Power gain

Low noise

amplifier block

Noise figure

H

L

GPL

11 12.5 14 dB

H

H GPH

13 14.5 16

When a small signal

H

L NFL

— 1.8 2.3

dB

H

H NFH

— 1.6 2.1

Input IP3

L L or H IIP3SW 25 35 —

H

L IIP3L –3 0 — dBm ∗1

H

H IIP3H 2 4.5 —

Isolation

H

L

ISO

H

H

20 24 — dB When a small signal

Current consumption

IDD

— 7.5 10 mA When no signal

Mixer block

Conversion gain

Noise figure

Input IP3

GC

10.5 12 13.5 dB

When a small signal

NF

— 4.5 6 dB

IIP3 0.5 3 — dBm ∗1

LO to RF leak level

PLK

— –30 –25 dBm

—

∗1 fRF=850MHz/850.9MHz, PRF = –25dBm (low noise amplifier mode, mixer)/0dBm (bypass switch mode)

Conversion by the IM3 suppression ratio for two-wave input.

Note) The values shown above are the specified values on the Sony's recommended evaluation board.

–2–

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