BYV74F 查看數據表（PDF） - Philips Electronics
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BYV74F Datasheet PDF : 6 Pages
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Philips Semiconductors
Dual rectifier diodes
ultrafast
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-hs
Thermal resistance junction to
heatsink
Rth j-a
Thermal resistance junction to
ambient
CONDITIONS
both diodes conducting
with heatsink compound
without heatsink compound
per diode
with heatsink compound
without heatsink compound
in free air.
ELECTRICAL CHARACTERISTICS
characteristics are per diode at Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
VF
Forward voltage
IF = 15 A; Tj = 150˚C
IF = 15 A
IF = 30 A
IR
Reverse current
VR = VRRM
VR = VRRM; Tj = 100 ˚C
Qs
Reverse recovery charge
IF = 2 A to VR ≥ 30 V;
dIF/dt = 20 A/µs
trr
Reverse recovery time
IF = 1 A to VR ≥ 30 V;
dIF/dt = 100 A/µs
Irrm
Peak reverse recovery current IF = 10 A to VR ≥ 30 V;
dIF/dt = 50 A/µs; Tj = 100˚C
Vfr
Forward recovery voltage
IF = 10 A; dIF/dt = 10 A/µs
Product specification
BYV74F series
MIN. TYP. MAX. UNIT
-
-
4.0 K/W
-
-
8.0 K/W
-
-
5.0 K/W
-
-
9.0 K/W
-
35
- K/W
MIN.
-
-
-
-
-
-
TYP.
0.95
1.08
1.15
10
0.3
40
MAX.
1.12
1.25
1.36
50
0.8
60
UNIT
V
V
V
µA
mA
nC
-
50 60 ns
-
4.2 5.2 A
-
2.5
-
V
September 1998
2
Rev 1.300
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