BYV25X-600 查看數據表（PDF） - NXP Semiconductors.
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BYV25X-600 Datasheet PDF : 9 Pages
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NXP Semiconductors
7. Characteristics
Table 6. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
VF
forward voltage
IR
reverse current
Dynamic characteristics
IF = 5 A; Tj = 150 °C; see Figure 2
IF = 5 A
VR = 600 V
VR = 600 V; Tj = 100 °C
Qr
recovered charge
IF = 2 A to VR ≥ 30 V; dIF/dt = 20 A/µs;
see Figure 3
trr
reverse recovery time IF = 1 A to VR ≥ 30 V;
dIF/dt = 100 A/µs; see Figure 3
IRM
peak reverse recovery IF = 10 A to VR ≥ 30 V;
current
dIF/dt = 50 A/µs; Tj = 100 °C;
see Figure 3
VFR
forward recovery
IF = 10 A; dIF/dt = 10 A/µs;
voltage
see Figure 4
BYV25X-600
Rectifier diode, ultrafast
Min
Typ
Max Unit
-
0.97 1.11 V
-
1.12 1.30 V
-
2
50
µA
-
0.1
0.35 mA
-
40
70
nC
-
50
60
ns
-
3
5.5
A
-
3.2
-
V
15
IF
(A)
10
003aac232
(1) (2) (3)
5
0
0
0.4
0.8
(1) Tj = 150 °C; typical values
(2) Tj = 150 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig 2. Forward current as a function of forward voltage
1.2
1.6
VF (V)
BYV25X-600_1
Product data sheet
Rev. 01 — 12 August 2008
© NXP B.V. 2008. All rights reserved.
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