BUL810 查看數據表（PDF） - Inchange Semiconductor

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BUL810

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

BUL810

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; L= 25mH

450

V

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 10mA; IC= 0

9

V

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A ;IB= 1A

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A ;IB= 1.6A

VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 12A ;IB= 2.4A

VBE(sat) Base-Emitter Saturation Voltage

IC= 5A ;IB= 1A

VBE(sat) Base-Emitter Saturation Voltage

ICES

Collector Cutoff Current

ICEO

Collector Cutoff Current

IC= 8A ;IB= 1.6A

VCE=1000V; VBE= 0;

VCE=1000V; VBE= 0;TC=125℃

VCE= 450V; IB= 0

1.0

V

1.5

V

5.0

V

1.3

V

1.6

V

0.1

0.5

mA

0.25 mA

hFE-1

DC Current Gain

IC= 5A ; VCE= 5V

10

40

hFE-2

DC Current Gain

IC= 10mA ; VCE= 5V

10

Switching Times (inductive load)

ts

Storage Time

tf

Fall Time

IC= 8A ;IB1= 1.6A;VBE(off)= -5V

RBB= 0.4Ω, VCL= 350V,

L= 200μH

1.5 2.3 μs

55 110 ns

isc Website：www.iscsemi.cn

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