Philips Semiconductors
BUK9506-55A; BUK9606-55A;
BUK9E06-55A
2.5
VGS(th)
(V)
2
1.5
1
max
typ
min
03aa33
10-1
ID
(A)
10-2
10-3
10-4
03aa36
min typ max
0.5
10-5
0
-60
0
60
120
180
Tj (oC)
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
10-6
0
0.5
1
1.5
2
2.5
3
VGS (V)
Tj = 25 °C; VDS = VGS
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
gfs140
(S)
120
100
80
60
40
20
0
0
03ne96
20
40
60
80
100
ID (A)
Tj = 25 °C; VDS = 25 V
Fig 11. Forward transconductance as a function of
drain current; typical values.
18000
C (pF)
16000
14000
12000
10000
8000
6000
4000
2000
0
10-2
10-1
1
03nf01
Ciss
Coss
Crss
10
102
VDS (V)
VGS = 0 V; f = 1 MHz
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 08416
Product data
Rev. 03 — 23 July 2001
© Philips Electronics N.V. 2001. All rights reserved.
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