BSS 88
Power dissipation
Ptot = ƒ(TA)
1.2
W
1.0
Ptot
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0 20 40 60 80 100 120 °C 160
TA
Safe operating area ID=f(VDS)
parameter : D = 0.01, TC=25°C
Drain current
ID = ƒ(TA)
parameter: VGS ≥ 4 V
0.26
A
0.22
ID 0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
0
20 40 60 80 100 120 °C 160
TA
Drain-source breakdown voltage
V(BR)DSS = ƒ(Tj)
Semiconductor Group
285
V
275
V(BR)DSS270
265
260
255
250
245
240
235
230
225
220
215
-60
-20
20
60
100 °C 160
Tj
5
12/05/1997