BSS138N 查看數據表（PDF） - Infineon Technologies

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BSS138N

SIPMOS® Small-Signal-Transistor

Infineon Technologies 

Parameter

Thermal characteristics

Thermal resistance,

junction - minimal footprint

Symbol Conditions

R thJA

BSS138N

min.

Values

typ.

Unit

max.

-

-

350 K/W

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS= 0 V, I D=250 µA

60

-

-V

Gate threshold voltage

Drain-source leakage current

V GS(th) V GS=V DS, I D=26 µA

0.6

1.0

1.4

I D (off)

V DS=60 V,

V GS=0 V, T j=25 °C

-

-

0.1 µA

V DS=60 V,

V GS=0 V, T j=150 °C

-

Gate-source leakage current

I GSS

V GS=20 V, V DS=0 V

-

Drain-source on-state resistance

R DS(on) V GS=4.5 V, I D=0.03 A

-

-

5

1

10 nA

3.3

4.0 Ω

Transconductance

V GS=4.5 V, I D=0.19 A

-

3.5

6.0

V GS=10 V, I D=0.23 A

-

2.2

3.5

g fs

|V DS|>2|I D|R DS(on)max,

I D=0.18 A

0.1

0.2

-S

Rev. 2.86

page 2

2012-04-17

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