BSS126 查看數據表（PDF） - Infineon Technologies
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BSS126 Datasheet PDF : 9 Pages
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9 Drain-source on-state resistance
R DS(on)=f(T j); I D= 0.016mA; V GS=0 V
1600
10 Typ. gate threshold voltage
V GS(th)=f(T j); V DS=3 V; I D = 8 µA
parameter: I D
-1
BSS126
1400
1200
1000
800
600
400
200
98 %
typ
-1.5
98 %
-2
typ
-2.5
2%
-3
0
-60 -20
20
60 100 140 180
Tj [°C]
-3.5
-60 -20 20
60 100 140 180
Tj [°C]
11 Threshold voltage bands
I D=f(V GS); V DS=3 V; T j=25 °C
12 Typ. capacitances
C =f(V DS); V GS=-3 V; f =1 MHz
0.1
100
0.01
N ML
K
J
10
8 µA
1
Ciss
Coss
Crss
0.001
-2.5
Rev. 2.1
-2
-1.5
VGS [V]
0.1
-1
0
page 6
10
20
30
VDS [V]
2012-03-14
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