BSS123(2003) 查看數據表（PDF） - Fairchild Semiconductor
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BSS123
(Rev.:2003)
(Rev.:2003)
Fairchild Semiconductor
BSS123 Datasheet PDF : 5 Pages
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Typical Characteristics
10
ID = 0.17A
8
6
VDS = 30V
50V
70V
4
2
0
0
0.4
0.8
1.2
1.6
2
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
1
RDS(ON) LIMIT
0.1
100µs
1ms
10ms
100ms
1s
10s
DC
0.01
VGS = 10V
SINGLE PULSE
RθJA = 350oC/W
TA = 25oC
0.001
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
1000
Figure 9. Maximum Safe Operating Area.
100
80
CISS
60
f = 1 MHz
VGS = 0 V
40
20
COSS
CRSS
0
0
20
40
60
80
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
5
4
3
2
1
0
0.001
0.01
SINGLE PULSE
RθJA = 350°C/W
TA = 25°C
0.1
1
10
t1, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA(t) = r(t) * RθJA
RθJA = 350oC/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
10
100
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1a.
Transient thermal response will change depending on the circuit board design.
1000
BSS123 Rev G(W)
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