BSP296 查看數據表（PDF） - Infineon Technologies

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BSP296

SIPMOS® Small-Signal-Transistor

Infineon Technologies 

Rev. 2.1

BSP296

SIPMOS Small-Signal-Transistor

Feature

• N-Channel

• Enhancement mode

• Logic Level

• dv/dt rated

• Pb-free lead plating; RoHS compliant

x Qualified according to AEC Q101

Product Summary

VDS

100 V

RDS(on) 0.7 Ω

ID

1.1 A

PG-SOT223

4

3

2

1

VPS05163

Type

BSP296

BSP296

Package

PG-SOT223

PG-SOT223

Tape and Reel Information

L6433: 4000 pcs/reel

L6327: 1000 pcs/reel

Marking Packaging

BSP296 Non dry

BSP296 Non dry

Maximum Ratings, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Continuous drain current

TA=25°C

TA=70°C

Pulsed drain current

TA=25°C

Reverse diode dv/dt

ID

ID puls

dv/dt

A

1.1

0.88

4.4

6

kV/µs

IS=1.1A, VDS=80V, di/dt=200A/µs, Tjmax=150°C

Gate source voltage

ESD (JESD22-A114-HBM)

VGS

±20

V

1B (>500V, <1000V)

Power dissipation

TA=25°C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

Ptot

Tj , Tstg

1.79

W

-55... +150

°C

55/150/56

Page 1

2009-08-18

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