BLF6G10LS-135R 查看數據表（PDF） - NXP Semiconductors.
零件编号
产品描述 (功能)
生产厂家
BLF6G10LS-135R Datasheet PDF : 10 Pages
| |||
NXP Semiconductors
BLF6G10LS-135R
Power LDMOS transistor
24
Gp
(dB)
23
001aah864 75
ηD
(%)
60
22 Gp
45
21
30
ηD
20
15
19
0
0
40
80
120
160
PL (W)
Fig 1.
VDS = 28 V; IDq = 950 mA; f = 881 MHz.
One-tone CW power gain and drain efficiency as function of load power; typical
values
23
Gp
(dB)
22
Gp
21
ηD
20
001aah865
60
ηD
(%)
45
30
15
−20
IMD
(dBc)
−30
−40
−50
001aah866
IMD3
IMD5
IMD7
19
0
0
25
50
75
100
PL(PEP) (W)
Fig 2.
VDS = 28 V; IDq = 950 mA; f1 = 881 MHz (±100 kHz).
Two-tone CW power gain and drain efficiency
as function of peak envelope load power;
typical values
−60
0
25
50
75
100
PL(PEP) (W)
Fig 3.
VDS = 28 V; IDq = 950 mA; f1 = 881 MHz (±100 kHz).
Two-tone CW intermodulation distortion as a
function of peak envelope load power;
typical values
BLF6G10LS-135R_1
Product data sheet
Rev. 01 — 17 November 2008
© NXP B.V. 2008. All rights reserved.
4 of 10
Share Link: 