BFY193(2011) 查看數據表（PDF） - Infineon Technologies

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BFY193
(Rev.:2011)

HiRel NPN Silicon RF Transistor

Infineon Technologies 

Electrical Characteristics (continued)

BFY193

Parameter

Symbol

min.

DC Characteristics

Base-Emitter forward voltage

IE = 30 mA, IC = 0

DC current gain

IC = 30 mA, VCE = 8 V

VFBE

-

hFE

50

AC Characteristics

Transition frequency

fT

IC = 40mA, VCE = 5 V, f = 500 MHz

6,5

IC = 50 mA, VCE = 8 V, f = 500 MHz

-

Collector-base capacitance

CCB

-

VCB = 10 V, VBE = vbe = 0, f = 1 MHz

Collector-emitter capacitance

CCE

-

VCE = 10 V, VBE = vbe = 0, f = 1 MHz

Emitter-base capacitance

CEB

-

VEB = 0.5V, VCB = vcb = 0, f = 1 MHz

Noise Figure

F

-

IC = 15 mA, VCE = 5 V, f = 2 GHz,

ZS = ZSopt

Power gain

Gma 1.) 12.5

IC = 40 mA, VCE = 5V, f = 2 GHz

ZS = ZSopt , ZL= ZLopt

Transducer gain

IC = 40 mA, VCE = 5 V, f = 2 GHz

ZS = ZL = 50 

Output Power

IC = 50 mA, VCE = 5 V, f = 2GHz,

PIN=10dBm, ZS = ZL = 50 

|S21e|2

8

POUT

16.5

Notes.:

1.)

Gma



S21 (k 

S12

k 2  1) ,

S 21

Gms  S12

Values

Unit

typ. max.

-

1

V

100 175 -

GHz

7.5

-

8

-

0.56 0.75 pF

0.34 -

pF

1.9

2.4 pF

2.3

2.9 dB

13.5 -

dB

9

-

dB

17.5 -

dBm

IFAG IMM RPD D HIR

3 of 4

V2, February 2011

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