BF1208 查看數據表（PDF） - NXP Semiconductors.

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BF1208

Dual N-channel dual gate MOSFET

NXP Semiconductors. 

NXP Semiconductors

BF1208

Dual N-channel dual gate MOSFET

8.2.1 Graphics for amplifier B

30

ID

(mA)

20

001aaa568

(1)

(4)

(2)

(3)

(5)

(6)

10

(7)

0

0

0.4

0.8

1.2

1.6

2

VG1-S (V)

(1) VG2-S = 4 V.

(2) VG2-S = 3.5 V.

(3) VG2-S = 3 V.

(4) VG2-S = 2.5 V.

(5) VG2-S = 2 V.

(6) VG2-S = 1.5 V.

(7) VG2-S = 1 V.

VDS(B) = 5 V; VDS(A) = VG1-S(A) = 0 V; Tj = 25 C.

Fig 17. Amplifier B: transfer characteristics; typical

values

32

ID

(mA)

24

16

8

001aaa569

(1)

(2)

(3)

(4)

(5)

(6)

(7)

0

0

2

4

6

VDS (V)

(1) VG1-S(B) = 1.6 V.

(2) VG1-S(B) = 1.5 V.

(3) VG1-S(B) = 1.4 V.

(4) VG1-S(B) = 1.3 V.

(5) VG1-S(B) = 1.2 V.

(6) VG1-S(B) = 1.1 V.

(7) VG1-S(B) = 1 V.

VG2-S = 4 V; VDS(A) = VG1-S(A) = 0 V; Tj = 25 C.

Fig 18. Amplifier B: output characteristics; typical

values

BF1208

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 2 — 7 September 2011

© NXP B.V. 2011. All rights reserved.

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